Gottfried Strasser

Gottfried Strasser

Gottfried Strasser

The group of Gottfried Strasser (GS), consisting of electrical engineers and physicists, has a twofold background. The research focus is, from a material engineering point of view, the growth of semiconductor heterostructures and the fabrication of metamaterials like photonic crystals. The growth of semiconductors itself is done by molecular beam epitaxy (MBE) and concentrates on 3D (three-dimensional), 2D, 1D, and 0D semiconductor heterostructures. The 3D layers are normally novel materials or material combinations, while 2D growth of heterostructures can be both, novel material combinations or growth for device fabrication. The growth of free standing nanowires can be done on 3D substrates as well as on nanowires from a different material class like III-V wires on group IV material. Quantum dots are grown on different substrates with an intentional lattice mismatch and are studied as surface dots (AFM) as well as within a semiconductor matrix by electrical and optical characterization (photoluminescence, electroluminescence, electrical transport, transmission). Photonic Crystals (PhCs) are periodic structures within an existing material with different optical properties than bulk materials, the structure definition can be 1D (slabs), 2D (honeycomb- like designs), or 3D structures. The GS group is fabricating 1D and 2D photonic crystals and uses these in detector and emitter structures.

The second research topic of the group of GS is the demonstration of semiconductor devices in micro- and optoelectronics. This activities include transistors and transport devices, but have a strong focus on optoelectronics, namely mid-infrared detectors and quantum cascade lasers.

Link to Prof. Strasser's group